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| Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1588 DESCRIPTION With TO-3PML package Complement to type 2SD2439 APPLICATIONS Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CONDITIONS Open emitter Open base Collector-emitter voltage HAN INC Emitter-base voltage Collector current Base current Junction temperature Storage temperature SEM GE TC=25ae Open collector OND IC TOR UC VALUE -160 -150 -5 -10 -1 80 150 -55~150 ae ae UNIT V V V A A W Collector power dissipation 1 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-7 A;IB=-7m A IC=-7 A;IB=-7m A VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-7A ; VCE=-4V IC=-2A ; VCE=-12V IE=0; VCB=-10V;f=1MHz 5000 50 230 MIN -150 2SB1588 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V -2.5 -3.0 -100 -100 |I |I V V A A MHz pF Switching times ton ts tf Turn-on time Storage time Fall time ANG CH P 6500-20000 Y hFE classifications O 5000-12000 IN EMIC ES IC=-7A;RL=10| IB1=-IB2=-7mA VCC=-70V OND TOR UC 0.8 |I 3.0 1.2 |I s |I s s 15000-30000 2 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 2SB1588 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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